Secondary ion emission under bombardment of GaAs monocrystal by molecular ions of copper phthalocyanine
Abstract
The spectra of secondary ion emission in sputtering of GaAs monocrystal by molecular ions CuPc <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> , ¼CuPc <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> , CuPc <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2+</sup> within the energy range E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">o</sub> = 3-12 keV have been studied. The preferential yield of the cluster ions Ga <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</sub> with the number of the constituent atoms n more than 20 has been observed. This yield has increased significantly non-additively with the raise in the number of atoms in a molecular ion projectile.