On the unimolecular decay and mechanism of formation of Si+ n cluster ions
Н. Х. ДжемилевInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanС. Ф. КоваленкоInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanС. Е. МаксимовInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanО. Ф. ТукфатуллинInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, UzbekistanШ. Т. ХожиевInstitute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, Uzbekistan
ABI
Abstract
Dependences of the emission and fragmentation of sputtered Si + clusters with n =1–11 on the oxygen pressure near the surface are studied using secondary-ion mass spectrometry under Xe+-ion bombardment of a silicon surface. It is shown that taking into account the mutual reversibility of reactions of formation and unimolecular decay, the formation of Si + clusters under ion sputtering can be described within the framework of a mechanism of combinatorial synthesis.
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