Article

New Method of Determining the Landau Levels in Narrow-Gap Semiconductors

G. GulyamovNamangan Engineering-Pedagogical Institute, Namangan, UzbekistanУ. И. ЭркабоевPhysico-Technical Institute, NGO "Physics-Sun", Academy of Sciences of Uzbekistan, Tashkent, UzbekistanG. N. MajidovaNamangan Engineering-Pedagogical Institute, Namangan, UzbekistanM. O. QosimovaNamangan Engineering-Pedagogical Institute, Namangan, UzbekistanA. B. DavlatovNamangan State University, Namangan, Uzbekistan

Open Journal of Applied Sciencesjournal2015en

ABI

Abstract

With the help of mathematical models, the temperature dependence of the density of energy states was determined in a quantizing magnetic field. The influence of the effective mass at the temperature dependence of the density of the energy states in a strong quantizing magnetic field is investigated. The dependence temperature of density of energy states graph is obtained in a strong magnetic field for InSb.

Topics

Semiconductor Quantum Structures and Devices Quantum and electron transport phenomena Advanced Research in Systems and Signal Processing

Identifiers

DOI: 10.4236/ojapps.2015.512073

Citations and references

Cited by 09 references

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