Electrophysical and optical properties of silicon produced by multiple remelting of metallurgical silicon by concentrated solar beams (Review)
А. С. СаидовPhysical-Technical Institute, NPO Physics-Sun, Academy of Sciences of Uzbekistan, Tashkent, Republic of UzbekistanA. Yu. LeĭdermanPhysical-Technical Institute, NPO Physics-Sun, Academy of Sciences of Uzbekistan, Tashkent, Republic of Uzbekistan
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Abstract
The review describes a new method for refining silicon—multiple melting of industrial silicon in open air in a solar furnace. The results of three-, five- and eightfold refining are given. In all cases, a sample of melted silicon with simple ohmic contacts during heating at T > 30°C becomes a current and voltage generator, which is explained by the processes of self-organization of deep-lying impurities, leading to their periodic distribution along the sample. From such silicon, p–n transfer is obtained, which opens possibilities for practical application.
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