Article

The Nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-Junctions in a Microwave Field

G. GulyamovNamangan Engineering Pedagogical Institute, Namangan, UzbekistanDadamirzaev Muhammadjon GulomkodirovichNamangan State University, Namangan, UzbekistanHasan Yusupovich MavlyanovNamangan Engineering Pedagogical Institute, Namangan, Uzbekistan

Journal of Applied Mathematics and Physicsjournal2015en

ABI

Abstract

It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the concentration of electrons and holes, as well as their temperature, coefficient and diffusion length, the temperature of the phonons, the applied voltage, and the height of the potential barrier.

Topics

Silicon and Solar Cell Technologies Semiconductor materials and interfaces Advancements in Semiconductor Devices and Circuit Design

Identifiers

DOI: 10.4236/jamp.2015.312193

Citations and references

Cited by 05 references

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