Article

Study of doping uniformity of a 200 kV ion implanter by RBS and sheet resistance measurements

Hui LiKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaZe-Song WangKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaShengjun ZhangKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaVasiliy PelenovichInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, Tashkent, 700135, UzbekistanFeng RenKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaDejun FuKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaChuan-Sheng LiuKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, ChinaZhiwei AiKey Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China

Nuclear Science and Techniquesjournal2016en

ABI

Abstract

No abstract available.

Topics

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Silicon and Solar Cell Technologies

Identifiers

DOI: 10.1007/s41365-016-0058-x

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