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Works cited by this work

14 works

Work: Origin of the electrical activity of iron atoms in vitreous arsenic selenide

  1. Model for the Electronic Structure of Amorphous Semiconductors

    P. W. Anderson

    Article197515 citations
    ABI

  2. Mössbauer studies of two-electron centers with negative correlation energy in crystalline and amorphous semiconductors

    G. A. Bordovsky, С. А. Немов, А. В. Марченко +1

    Article20125 citations
    ABI

  3. Properties and structure of (As2Se3)1 − z(SnSe)z − x(GeSe)x and (As2Se3)1 − z(SnSe2)z − x(GeSe2)x glasses

    Г. А. Бордовский, R. A. Castro, П. П. Серегин +1

    Article20062 citations
    ABI

  4. Structure and physicochemical properties of the (AsSI)1−x (As2S3) x and (AsSeI)1−x (As2Se3) x glasses

    V. A. Bordovskiĭ, R. A. Castro, А. В. Марченко +1

    Article20072 citations
    ABI

  5. Quantitative X-ray fluorescence analysis of As-Se glasses and films

    Г. А. Бордовский, А. В. Марченко, П. П. Серегин +2

    Article20092 citations
    ABI

  6. Composition determination of multicomponent chalcogenide glassy semiconductors with X-ray fluorescence analysis

    Г. А. Бордовский, А. В. Марченко, M. Yu. Kozhokar’ +2

    Article20132 citations
    ABI

  7. Determination of the quantitative composition of As-Se and Ge-Se glasses and films by X-ray fluorescence analysis

    V. A. Bordovskiĭ, А. В. Марченко, Ф. С. Насрединов +2

    Article20102 citations
    ABI

  8. Two-electron tin centers formed in chalcogenide glasses as a result of nuclear transformations

    G. A. Bordovsky, А. В. Марченко, П. П. Серегин +3

    Article20102 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI