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Works cited by this work

31 works

Work: Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

  1. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    ArticleAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 citations
    ABI

  2. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    ArticleSemiconductor materials and devicesDoklady Physics20074 citations
    ABI

  3. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

    Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

    Article20114 citations
    ABI

  4. Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer, Tibor Grasser, Ph. Roussel +6

    Article20103 citations
    ABI

  5. Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

    Ivan A. Starkov, A. S. Starkov

    Article20133 citations
    ABI

  6. Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

    J. Martín-Martínez, Simone Gerardin, E. Amat +5

    Article20093 citations
    ABI

  7. Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

    Jihoon Seo, Gang-Jun Kim, Donghee Son +3

    Article20163 citations
    ABI

  8. Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

    Yeohyeok Yun, Jihoon Seo, Young-Kyu Kwon +1

    Article20193 citations
    ABI

  9. A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor

    Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene +1

    Article20132 citations
    ABI

  10. Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

    Souvik Mahapatra, C.D. Parikh, V. Ramgopal Rao +2

    Article20002 citations
    ABI

  11. Analysis of hot-carrier-induced degradation mode on pMOSFET's

    F. Matsuoka, Hiroshi Iwai, H. Hayashida +3

    Article19902 citations
    ABI

  12. AC versus DC hot-carrier degradation in n-channel MOSFETs

    K. Mistry, Barry M. Doyle

    Article19932 citations
    ABI

  13. Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

    Yeohyeok Yun, Jihoon Seo, Donghee Son +1

    Article20182 citations
    ABI

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