Article

Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

А.С. РысбаевTashkent State Technical UniversityS.U. IrgashevTermez State UniversityA.S. KasimovTermez State UniversityD.Sh. JuraevaTermez State UniversityJ. B. KhujaniyazovTashkent State Technical UniversityM.I. KhudoyberdievaTermez State University

Eurasian journal of physics and functional materialsjournal2020en

ABI

Abstract

The formation of nanosized films of silicides on the surface of Si (111) and Si (100) was studied by the method of low-energy ion implantation. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. It is shown that the appearance of new surface superstructures is additional confirmation of the formation of thin silicide films with a single crystal structure.

Topics

Semiconductor materials and interfaces Ion-surface interactions and analysis Silicon and Solar Cell Technologies

Identifiers

DOI: 10.29317/ejpfm.2020040106

Citations and references

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