Electrophysical Properties of Two Structured Polycrystal Silicon
Abstract
The article first describes the results obtained in the study of the electrophysical and charge transfer processes of two structural polycrystalline silicon obtained by bonding silicon particles with sunlight. The results of the study show that the charge transfer processes in such structures are found to be different from each other. In particular, at T~300-800 K, a decrease in the surface area of both structures µ was observed, and the temperature dependence of p and n differed from each other. For example, (a) in the surface area T~300-350 K and T~600-710 K p increases and n decreases, at T~350-550 K p decreases and n increases. Conversely, the surface area of the sample (b) is characterized by an increase in p and a decrease in n at T≤575 K, a decrease in p in the later stages of temperature increase, and an increase in n.