Physical foundations of the formation of the silicon-based heterovarizonic structure

Abstract

With the formation of binary unit cells based on the A II and B VI , A III and B V elements, a heterovarizonic structure was obtained in the near-surface region of silicon, without destroying the crystal structure, without surface states with a thickness of about 5 μm. The resulting heterovarizonic structure has special fundamental parameters that ensure the absorption of light in a wide range of the solar spectrum from UV to IR radiation with λ=0.1-3 μm, i.e., it covers the entire solar spectrum. Keywords: silicon, photocell, solar cell, heterovarizonic structure, photovoltaics, A II B VI , A III , B V compounds.

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Identifiers

DOI

10.21883/tp.2022.14.55220.60-21

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