Dimensional quantization in InSb and GaAs in three-zone model
Rustam Yavkachovich RasulovDepartment of Physics, Fergana State University, Murabbiylar St., 19, Fergana, 150100, UzbekistanVoxob Rustamovich RasulovDepartment of Physics, Fergana State University, Murabbiylar St., 19, Fergana, 150100, UzbekistanBahodir Bahromovich AkhmedovDepartment of Physics, Fergana State University, Murabbiylar St., 19, Fergana, 150100, UzbekistanIslombek Arabboyevich MuminovDepartment of Physics, Fergana State University, Murabbiylar St., 19, Fergana, 150100, UzbekistanKamolakhon K. UrinovaDepartment of Physics, Kokand State Pedagogical Institute, Turon St., 23, Fergana, 150700, Uzbekistan
ABI
Abstract
Abstract Various cases of size quantization in narrow-gap crystals of cubic or tetrahedral symmetry in the three-band Kane approximation are analyzed. Expressions for the energy spectrum depending on the two-dimensional wave vector are obtained for two different cases, differing in the range of current carrier energy values. The size-quantized energy spectrum of electrons in the conduction band and holes in the subband of light holes in InSb and GaAs semiconductors is analyzed in the three-band Kane model.
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