Article

Influence of heating of charge carriers on the contact resistance of the Schottky barrier

G. GulyamovNamangan Engineering Construction Institute, Namangan, UzbekistanQ. UmarovNamangan Engineering Construction Institute, Namangan, UzbekistanAlisher Z. SoliyevNamangan Engineering Construction Institute, Namangan, UzbekistanBahodir ShahobiddinovNamangan Engineering Construction Institute, Namangan, Uzbekistan

AIP conference proceedingsjournal2024en

ABI

Abstract

The influence of heating of charge carriers on the contact resistance of the Schottky barrier is investigated. The current-voltage characteristics of the metal-semiconductor contact were calculated taking into account the heating of charge carriers and it was found that the contact resistance strongly depends both on the temperature of the charge carriers, as well as on the magnitude of the current flowing through the barrier. The nature of the dependence of the resistance on the current is due to the fact that the diode with hot carriers becomes a source of the electromotive force dependent on the current.

Topics

Semiconductor materials and interfaces Semiconductor Quantum Structures and Devices Advancements in Semiconductor Devices and Circuit Design

Identifiers

DOI: 10.1063/5.0181554

Citations and references

Cited by 019 references

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