Works cited by this work

12 works

Work: A new method for growing epitaxial films on foreign substrates − Bent epitaxy

1. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

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2. Reduction of Bowing in GaN-on-Sapphire and GaN-on-Silicon Substrates by Stress Implantation by Internally Focused Laser Processing

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