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Works cited by this work

9 works

Work: Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon

  1. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

    М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

    ArticleSemiconductor materials and interfacesApplied Solar Energy201513 citations
    ABI

  2. Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

    M. G. Mil’vidskiĭ, V. V. Chaldyshev

    Article199813 citations
    ABI

  3. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    ArticleSemiconductor materials and interfacesInorganic Materials20125 citations
    ABI

  4. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1

    Article20175 citations
    ABI

  5. Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy

    Yu. A. Astrov, Stephen A. Lynch, V. B. Shuman +3

    Article20133 citations
    ABI

  6. Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus

    Yu. A. Astrov, В. А. Козлов, А. N. Lodygin +4

    Article20093 citations
    ABI

  7. Untitled

    Other2 citations
    ABI

  8. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    ArticleChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 citations
    ABI

  9. Untitled

    Other1 citations
    ABI