Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects
Jo`shqin AbdullayevDepartment of Physics and Chemistry, National Research University TIIAME, Tashkent, UzbekistanI. B. SapaevDepartment of Physics and Chemistry, National Research University TIIAME, Tashkent, UzbekistanJonibek Sh. AbdullayevDepartment of Physics and Chemistry, National Research University TIIAME, Tashkent, UzbekistanDavron Aslonqulovich JuraevDepartment of Mathematical Analysis and Differential Equations, Karshi State University, 180119, Karshi, UzbekistanMahir Jalal JalalovDepartment of Information and Communication Technologies, Baku Slavic University, AZ1014, Baku, AzerbaijanEbrahim E. ElsayedDepartment of Electronics and Communications Engineering, Faculty of Engineering, Mansoura University, Mansoura, 35516, El-Dakahilia, Egypt
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