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Alteration of quantum capacitance of 2D metal oxide semiconductor field-effect transistors under the effect of microwave fields

G. GulyamovNamangan Engineering Construction Institute, Namangan 160103, UzbekistanM.G. DadamirzayevMamura Odiljonovna KosimovaNamangan Engineering Construction Institute, Namangan 160103, UzbekistanA.S. MakhmudovNamangan Engineering Construction Institute, Namangan 160103, Uzbekistan
Results in Opticsjournal2025en
ABI

Abstract

The dependence of quasi-Fermi levels and current–voltage characteristics of electrons and holes of two-dimensional (2D) diodes with a p-n-junction on the wavelength of light was theoretically studied. The quantum capacitance of 2D MOSFETs increases under the influence of a microwave field. The microwave field heats the electrons and holes in the channel, allowing the semiconductor to overcome the potential barrier. As a result, a direct current flows through the semiconductor.

Topics

Quantum and electron transport phenomenaAdvancements in Semiconductor Devices and Circuit DesignSemiconductor Quantum Structures and Devices

Identifiers

DOI
10.1016/j.rio.2025.100931

Citations and references

Cited by 028 references
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