The Influence of a Strong Electromagnetic Field on Magnetoresistance Oscillations in Quantum-Scale Semiconductor Structures
Abstract
In recent years, interest in studying quantum well semiconductor structures has been driven by their potential application as nanotechnological devices operating in the nanoscale range, as well as in various spintronic devices. The main reason why scientists are so interested in these quantum-scale structures is that the physical properties of such materials have a number of interesting scientific processes, which allow us to more fully understand the fundamental changes in these processes under the influence of various external factors. In particular, one of such external factors is a quantizing magnetic field and a strong electromagnetic wave, which change the trajectories of charged particles moving freely along the crystal lattice of bulk or smallsized materials. This leads to the emergence of quantum-physical phenomena such as the quantum Hall effect, the Shubnikov-de Haas and de Haas-van Alphen effects.