Temperature Response Curve of Silicon Diode Temperature Sensors
Damir IstamovPhysical-Technical Institute of Uzbekistan Academy of Sciences, Tashkent, UzbekistanO. A. AbdulkhaevPhysical-Technical Institute of Uzbekistan Academy of Sciences, Tashkent, UzbekistanShukurullo M. KuliyevPhysical-Technical Institute of Uzbekistan Academy of Sciences, Tashkent, UzbekistanNuraddin AbdullayevNational University of Uzbekistan, Tashkent, UzbekistanShamshidin A. AshirovGulistan State University, Gulistan, UzbekistanD. M. YodgorovaPhysical-Technical Institute of Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
ABI
Abstract
In this paper the results of the development of a semi-analytical model of the temperature response curve of silicon temperature diode sensors for the case of an arbitrary current transport mechanism, and a physical model that allows for high-precision determination of the temperature response curve for the case of diffusion-dominated current transport are presented. The results obtained using calculations based on this model were compared with experimental data, which showed their correspondence over the entire temperature range.
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