Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties
Abstract
Abstract Gamma irradiation significantly affects the structural stability and mechanical performance of semiconductor materials; however, its impact on (gallium arsenide) GaAs(O):Cr single crystals remains insufficiently explored. In this study, GaAs(O):Cr single crystals were systematically investigated under gamma irradiation doses up to 500 kGy using x-ray diffraction (XRD), atomic force microscopy (AFM), and microhardness measurements. XRD analysis confirmed the retention of the cubic zinc blende structure (space group F-43 m) without the formation of secondary phases. Changes in lattice parameter and electron density were observed. The increase in crystallite size accompanied by a decrease in microstrain indicates defect redistribution and partial relaxation processes. AFM analysis revealed a gradual smoothing of the surface morphology, confirmed by a reduction in the RMS roughness, R a , and R z parameters. Microhardness exhibited a dose-dependent behavior, increasing from 219.2 ± 4.1 HV for the unirradiated sample to 240.7 ± 2.1 HV at 200 kGy, followed by a decrease to 221.8 ± 2.0 HV at 300 kGy. These results provide a deeper understanding of irradiation-induced defect evolution mechanisms in GaAs(O):Cr and reveal the interrelationship between structural, surface morphological, and mechanical properties, thereby demonstrating the potential applicability of this material in radiation-resistant semiconductor devices.