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Works citing this work

7 works

Work: EMF Induced in a p–n Junction under a Strong Microwave Field and Light

  1. Mathematical modeling determination coefficient of magneto-optical absorption in semiconductors in presence of external pressure and temperature

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov

    ArticleSemiconductor Quantum Structures and DevicesModern Physics Letters B202116 citations
    ABI

  2. A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

    U. I. Erkaboev, G. Gulyamov, R. G. Rakhimov

    ArticleSemiconductor Quantum Structures and DevicesIndian Journal of Physics202114 citations
    ABI

  3. Changes in diodes with a p-n-transition under the influence of microwave radiation

    G. Gulyamov, Gulnoza Majidova, Feruza Muxitdinova +1

    ArticleSemiconductor Quantum Structures and DevicesAIP conference proceedings20233 citations
    ABI

  4. Changing the Voltage of the p-n Junction in a Magnetic Field

    G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova

    ArticleSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology20232 citations
    ABI

  5. Change in the quasi-Fermi level and current - Voltage characteristics of diodes with a p-n junction under the action of light and deformation

    G. Gulyamov, Bahodir Shahobiddinov, Alisher Z. Soliyev +2

    ArticleSemiconductor materials and interfacesAIP conference proceedings20232 citations
    ABI

  6. Influence of heating of charge carriers on the contact resistance of the Schottky barrier

    G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1

    ArticleSemiconductor materials and interfacesAIP conference proceedings20240 citations
    ABI

  7. Influence of Temperature on Characteristics of a Diode with a p-n Junction in a Magnetic Field

    G. Gulyamov, Gulnoza Majidova, Saodat Madumarova +1

    ArticleAdvanced Research in Systems and Signal Processinge-Journal of Surface Science and Nanotechnology20240 citations
    ABI