Works citing this work

5 works

Work: Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

1. Influence of the two-dimensional density of states on the temperature dependence of the electrical conductivity oscillations in heterostructures with quantum wells

   Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +2

   ArticleSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B202312 citations

   ABIABI:AkademIndex/openalex/2023.article.000327

2. Determination of the Dependence of the Oscillation of Transverse Electrical Conductivity and Magnetoresistance on Temperature in Heterostructures Based on Quantum Wells

   У. И. Эркабоев, R. G. Rakhimov

   ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics202311 citations

   ABIABI:AkademIndex/openalex/2023.article.000321

3. Determination of the Dependence of Transverse Electrical Conductivity and Magnetoresistance Oscillations on Temperature in Heterostructures Based on Quantum Wells

   U. I. Erkaboev, R. G. Rakhimov

   ArticleSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology202311 citations

   ABIABI:AkademIndex/openalex/2023.article.000370

4. Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials

   Ulugbek Erkaboev, R. G. Rakhimov

   ArticleSemiconductor Quantum Structures and Devicese-Prime - Advances in Electrical Engineering Electronics and Energy202311 citations

   ABIABI:AkademIndex/openalex/2023.article.000576

5. Oscillations of transverse magnetoresistance in the conduction band of quantum wells at different temperatures and magnetic fields

   У. И. Эркабоев, R. G. Rakhimov

   ArticleQuantum and electron transport phenomenaJournal of Computational Electronics20245 citations

   ABIABI:AkademIndex/openalex/2024.article.000788