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Works cited by this work

10 works

Work: Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

  1. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201415 citations
    ABI

  2. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20149 citations
    ABI

  3. Electronic properties of semiconducting silicides: fundamentals and recent predictions

    L. Ivanenko, В. Л. Шапошников, А. Б. Филонов +6

    Article20046 citations
    ABI

  4. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    ArticleSemiconductor materials and interfacesSemiconductors20175 citations
    ABI

  5. Special Applications

    S. P. Murarka

    Chapter19833 citations
    ABI

  6. Implantation of sodium ions into germanium

    V.M. Korol, Yu. Kudriavtsev

    Article20123 citations
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  7. Synthesis and applications of metal silicidenanowires

    Andrew L. Schmitt, Jeremy M. Higgins, Jeannine R. Szczech +1

    Article20093 citations
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  8. The growth of manganese layers on Si(100) at room temperature: A photoelectron spectroscopy study

    Christopher A. Nolph, E. Vescovo, Petra Reinke

    Article20093 citations
    ABI

  9. Untitled

    Other1 citations
    ABI

  10. Untitled

    Other1 citations
    ABI