Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem
← Back to work

Works citing this work

11 works

Work: An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 citations
    ABI

  2. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleSemiconductor materials and interfacesEast European Journal of Physics202410 citations
    ABI

  3. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 citations
    ABI

  4. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 citations
    ABI

  5. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 citations
    ABI

  6. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 citations
    ABI

  7. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    ArticleSemiconductor materials and interfacesJournal of Electronic Materials20253 citations
    ABI

  8. Low-Temperature Electrophysical and optical Properties of p-Si/n-CdS Heterojunctions

    Jo`shqin Abdullayev, I. B. Sapaev, Jamoliddin Razzokov +2

    PreprintSemiconductor materials and interfacesSSRN Electronic Journal20250 citations
    ABI

  9. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    ArticleSemiconductor materials and interfacesJournal of Electronic Materials20260 citations
    ABI

  10. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    ArticleSemiconductor materials and interfacesJournal of Electronic Materials20260 citations
    ABI

  11. Mathematical Analysis of the C-V of Nanowires Based on Si and GaAs

    Dostonbek Abduraimov, Avaz Ergashev, Mehrigiyo Uktamova +3

    ArticleNanowire Synthesis and ApplicationsEPJ Web of Conferences20260 citations
    ABI