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J. Sh. Abdullayev

5 works

Head of the department «Physics and Chemistry», National Research University TIIAME, Kori Niyoziy 39, 100000, Tashkent, Uzbekistan

  1. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    ArticleSemiconductor materials and interfacesJournal of Electronic Materials20260 citations
    ABI

  2. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    ArticleSilicon and Solar Cell TechnologiesLow Temperature Physics20260 citations
    ABI

  3. Thermal Expansion Characteristics of Planar and Radial Si/GaAs p–n Heterojunctions

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20260 citations
    ABI

  4. Mathematical Modeling of Electrostatic Potential in Radial and Planar p–n Junctions: A Comparative Study

    Dildora Qalandarova, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20260 citations
    ABI

  5. Cryogenic Material and Electrophysical Changes in Si and GaAs

    Jonibek Sh. Abdullayev, M. Sh. Ibragimova, J. Sh. Abdullayev +1

    ArticleSilicon and Solar Cell TechnologiesEast European Journal of Physics20260 citations
    ABI