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6 works

Work: Photosensitivity of n-CdS/p-CdTe heterojunctions obtained by chemical surface deposition of CdS

  1. Fabrication and Properties of nSi–pCdTe Heterojunctions

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев +1

    ArticleChalcogenide Semiconductor Thin FilmsInorganic Materials20208 citations
    ABI

  2. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

    А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

    ArticleChalcogenide Semiconductor Thin FilmsModern Physics Letters B20234 citations
    ABI

  3. Fabrication of Si/CdTe Heterostructure via Vacuum Thermal Evaporation: Synthesis and Properties Characterization

    I. B. Sapaev, S. Sadullaev, U. Kh. Rakhmonov

    ArticleChalcogenide Semiconductor Thin FilmsEngineering Technology & Applied Science Research20251 citations
    ABI

  4. Quantum-Dimensional Near-Surface Recombination of Photocarriers in CdTe Microcrystals

    А. В. Селькин, N. Kh. Yuldashev

    ArticleQuantum Dots Synthesis And PropertiesBulletin of the Russian Academy of Sciences Physics20231 citations
    ABI

  5. Surface Quantum-Dimensional Photocarrier Recombination in &amp;lt;i&amp;gt;CdTe&amp;lt;/i&amp;gt; Microcrystals

    А. В. Селькин, N. Kh. Yuldashev

    ArticleAdvanced Semiconductor Detectors and MaterialsJournal of Applied Mathematics and Physics20230 citations
    ABI

  6. Quantum-dimensional near-surface recombination of photocarriers in CdTe microcrystals

    А. В. Селькин, N. Kh. Yuldashev

    ArticleQuantum Dots Synthesis And PropertiesИзвестия Российской академии наук Серия физическая20230 citations
    ABI