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14 works

Work: Optimal Conditions for Nickel Doping to Improve the Efficiency of Silicon Photoelectric Cells

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  8. Diffusion in Silicon - 10 Years of Research

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  9. The Influence of the Conditions of Getter Formation in High-Resistivity Silicon on the Characteristics of PIN Photodiodes

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  10. Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C

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  11. Diffusivity and solubility of Ni<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mo>(</mml:mo></mml:mrow><mml:mrow><mml:mn>63</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:math>Ni) in monocrystalline Si

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    Article19892 citations
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  12. Ti, Fe, and Ni in Si and their interactions with the vacancy and the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>center: A theoretical study

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  13. Ni cluster on a silicon surface by the Density Functional Theory and X-ray absorption spectroscopy investigations

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  14. Untitled

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