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4 works

Work: Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

  1. Effect of γ-Irradiation on Structure and Electrophysical Properties of S-Doped ZnO Films

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev

    ArticleZnO doping and propertiesEast European Journal of Physics20247 citations
    ABI

  2. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

    С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20224 citations
    ABI

  3. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 citations
    ABI

  4. Structural Features of Single-Crystal Silicon Doped with Copper

    S. Z. Zainabidinov, Sh. A. Makhmudov, A. K. Rafikov +3

    ArticleSilicon Nanostructures and PhotoluminescenceJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20250 citations
    ABI