Article

Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)

A. M. RasulovFerghana Polytechnic Institute, Ferghana Str. 86, 712022 Ferghana, UzbekistanA.A. DzhurakhalovArifov Institute of Electronics, F. Khodjaev Str. 33, 700125 Tashkent, Uzbekistan

Computational Materials Sciencejournal2005en

ABI

Abstract

No abstract available.

Topics

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Silicon and Solar Cell Technologies

Identifiers

DOI: 10.1016/j.commatsci.2004.12.053

Citations and references

Cited by 2 12 references

Metrics — AkademScholar