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Works cited by this work

12 works

Work: Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)

  1. Atomic collisions on solid surfaces

    Peter Sigmund

    Article199435 citations
    ABI

  2. Atomic collisions on solid surfaces

    E.S. Parilis

    Book199322 citations
    ABI

  3. THE STOPPING AND RANGE OF IONS IN SOLIDS

    J. F. Ziegler

    Chapter198815 citations
    ABI

  4. Computer simulation of atomic-displacement cascades in solids in the binary-collision approximation

    Mark T. Robinson, Ian M. Torrens

    Article197415 citations
    ABI

  5. THE STOPPING AND RANGE OF IONS IN SOLIDS

    J. F. Ziegler

    Chapter198411 citations
    ABI

  6. Computer Simulation of Ion-Solid Interactions

    W. Eckstein

    Book19918 citations
    ABI

  7. Ranges and profiles of distribution of low-energy ions channeling in metal and semiconductor single crystals

    F. F. Umarov, A. M. Rasulov, A. Kh. Khaidarov

    ArticleIon-surface interactions and analysisRadiation effects and defects in solids20033 citations
    ABI

  8. Anomalous inelastic energy losses and trajectory effects at small angle ion scattering by single crystal surface

    A.A. Dzhurakhalov, F. F. Umarov

    Article19983 citations
    ABI

  9. Channeling: theory, observation and applications

    D. V. Morgan

    Book19732 citations
    ABI

  10. Determination of adatom sort and adsorption sites on single crystal surfaces by ions channeling through thin films

    F. F. Umarov, A. M. Rasulov

    ArticleCrystallography and Radiation PhenomenaApplied Surface Science19982 citations
    ABI

  11. Ion Implantation: Equipment and Techniques

    H. Ryssel, H. Glawischnig

    Book19832 citations
    ABI

  12. Untitled

    Other1 citations
    ABI