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Work: Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties

  1. STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

    Sharifa B. Utamuradova

    ArticleAdvanced Materials Characterization TechniquesAdvanced Physical Research20241 citations
    ABI

  2. Structural Features of Silicon with Tin Impurity

    Sharifa B. Utamuradova, Bakhodir B. Bokiyev, D. S. Pulatova

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20240 citations
    ABI