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Work: Isostructural BaSi<sub>2</sub>, BaGe<sub>2</sub> and SrGe<sub>2</sub>: electronic and optical properties

  1. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    ArticleIon-surface interactions and analysisAIP conference proceedings20224 citations
    ABI

  2. On Si/NiSi2/Si(111) Heterostructures Obtained by Solid-Phase Deposition

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков +1

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 citations
    ABI