Works citing this work

3 works

Work: Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

1. Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

   Б. Е. Умирзаков, I. R. Bekpulatov, Gunel Imanova +2

   ArticleIon-surface interactions and analysisEurasian journal of physics and functional materials20232 citations

   ABIABI:AkademIndex/openalex/2026.other.267071

2. Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

   Б. Е. Умирзаков, I. R. Bekpulatov, Z. A. Tursunmetova

   ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20231 citations

   ABIABI:AkademIndex/openalex/2026.other.558588

3. Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)

   S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2

   ArticleIon-surface interactions and analysisCoatings20240 citations

   ABIABI:AkademIndex/openalex/2024.article.002442