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Works cited by this work

37 works

Work: Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy

  1. Radiation effects in semiconductors

    J. W. Corbett, G. D. Watkins

    Book19717 citations
    ABI

  2. Microcomputer program for analysis of positron annihilation lifetime spectra

    J. Kansy

    Article19966 citations
    ABI

  3. Positron Annihilation in Semiconductors

    R. Krause‐Rehberg, Hartmut S. Leipner

    Book19996 citations
    ABI

  4. Defect spectroscopy with positrons: a general calculational method

    M. J. Puska, R M Nieminen

    Article19835 citations
    ABI

  5. Positrons in Solids

    P. Hautojärvi

    Book19795 citations
    ABI

  6. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

    В. П. Маркевич, I.D. Hawkins, А. R. Peaker +5

    Article20044 citations
    ABI

  7. Identification of defect properties by positron annihilation in Te-doped GaAs after Cu in-diffusion

    Mohamed Elsayed, R. Krause‐Rehberg, W. Anwand +2

    Article20113 citations
    ABI

  8. Theoretical and experimental study of positron annihilation with core electrons in solids

    M. Alatalo, B. Barbiellini, Mikko Hakala +6

    Article19963 citations
    ABI

  9. Shallow positron traps in GaAs

    K. Saarinen, P. Hautojärvi, A. Vehanen +2

    Article19893 citations
    ABI

  10. Lattice defects in semiconductors

    Ryukichi Hashiguchi

    Book19683 citations
    ABI

  11. Divacancy clustering in neutron-irradiated and annealed<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type germanium

    K. Kuitunen, Filip Tuomisto, J. Slotte +1

    Article20082 citations
    ABI

  12. Observation of Irradiation-Induced Interstitial Copper Impurity in Germanium

    Akio Hiraki, J. W. Cleland, J. H. Crawford

    Article19672 citations
    ABI

  13. Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

    Miki Naganawa, Yasuo Shimizu, Masashi Uematsu +4

    Article20082 citations
    ABI

  14. Double-hump diffusion profiles of copper and nickel in germanium wafers yielding vacancy-related information

    A. Giese, N. A. Stolwijk, H. Bracht

    Article20002 citations
    ABI

  15. Deep level defects produced by electron irradiation and their annealings in undoped germanium

    Kazuyoshi Ito, Takashi Ito, K. Mizuno

    Article19862 citations
    ABI

  16. Radiation defects in germanium. radiation defects annealed at ∼260°C in n-type germanium

    N. Fukuoka, H. Yamaji, M. Honda +1

    Article19922 citations
    ABI

  17. Divacancy complexes induced by Cu diffusion in Zn-doped GaAs

    Mohamed Elsayed, R. Krause‐Rehberg, B. Korff +2

    Article20132 citations
    ABI

  18. Substitution of Impurity Atoms by Self-Interstitials in Thermal Neutron Irradiated Germanium

    Noboru Fukuoka, Haruo Saito, J. W. Cleland

    Article19802 citations
    ABI

  19. Germanium<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mmultiscripts><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mprescripts/><mml:mrow/><mml:mrow><mml:mn>70</mml:mn></mml:mrow><mml:mrow/><mml:mrow/></mml:mmultiscripts></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mo>/</mml:mo></mml:mrow><mml:mrow><mml:mn>74</mml:mn></mml:mrow></mml:msup></mml:mrow></mml:math>Ge isotope heterostructures: An approach to self-diffusion studies

    H. D. Fuchs, W. Walukiewicz, E. E. Häller +6

    Article19952 citations
    ABI

  20. Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium

    Martin Werner, H. Mehrer, H. D. Hochheimer

    Article19852 citations
    ABI

  21. Direct observations of the vacancy and its annealing in germanium

    J. Slotte, Simo Kilpeläinen, Filip Tuomisto +2

    Article20112 citations
    ABI

  22. Production and annealing of electron irradiation damage in ZnO

    D. C. Look, D. C. Reynolds, J. W. Hemsky +2

    Article19992 citations
    ABI

  23. General Theory of Impurity Diffusion in Semiconductors via the Vacancy Mechanism

    S. M. Hu

    Article19692 citations
    ABI

  24. Divacancy defects in germanium studied using deep-level transient spectroscopy

    M. Christian Petersen, A. Nylandsted Larsen, A. Mesli

    Article20102 citations
    ABI

  25. Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si

    V. Ranki, A. Pelli, K. Saarinen

    Article20042 citations
    ABI