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Works citing this work

7 works

Work: Max Hansen and Kurt Anderko: Constitution of Binary Alloys. McGraw-Hill Book Co., New York, 1958, 1305頁, 23×16cm, \13.000.

  1. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    ArticlePhase-change materials and chalcogenidesApplied Solar Energy20198 citations
    ABI

  2. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 citations
    ABI

  3. Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

    Б. Сапаев, A. S. Saidov

    ArticleSemiconductor materials and interfacesSemiconductors20051 citations
    ABI

  4. The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates

    Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20041 citations
    ABI

  5. Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts

    Б. Сапаев

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20041 citations
    ABI

  6. (IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution

    Б. Сапаев, М. С. Саидов, А. С. Саидов +1

    ArticleMaterial Science and ThermodynamicsSemiconductors20041 citations
    ABI

  7. Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures

    А. С. Саидов, U. Kh. Rakhmonov, A. Yu. Leĭderman

    ArticleSemiconductor materials and interfacesApplied Solar Energy20180 citations
    ABI