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Works citing this work

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  1. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    ArticleSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 citations
    ABI