Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell
М. С. СаидовU. A. Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanB. M. AbdurakhmanovU. A. Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanL. O. OlimovU. A. Arifov Institute of Electronics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Abstract
The experimental data on the implementation of the impurity thermovoltaic effect arising at polycrystalline silicon grain boundaries are presented. The temperature curve of the dark short-circuit current in a polycrystalline silicon solar cell, whose shape is determined by the effect revealed, is qualitatively discussed.