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Work: Computer Simulation of Range and Damage Distributions of He ions in SiC
Computer simulation of ion implantation with visual observation of the implantation profiles
Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1
ArticleIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)20030 citationsABI