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2 works

Work: Electron paramagnetic resonance of deep boron acceptors in 4H-SiC and 3C-SiC crystals

  1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 citations
    ABI

  2. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 citations
    ABI