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Works cited by this work

12 works

Work: Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

  1. Charge storage in a nitride-oxide-silicon medium by scanning capacitance microscopy

    R. C. Barrett, C. F. Quate

    Article19915 citations
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  2. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    ArticleSemiconductor materials and devicesDoklady Physics20074 citations
    ABI

  3. Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM

    Y. Yatsuda, Shinji Nabetani, Ken Uchida +5

    Article19853 citations
    ABI

  4. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

    Ben Kaczer, J. Franco, Pieter Weckx +11

    Article20183 citations
    ABI

  5. Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology

    Hyunjung Shin, Seungbum Hong, Jooho Moon +1

    Article20022 citations
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  6. Electrostatic force microscopy: principles and some applications to semiconductors

    Paul Girard

    Article20012 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI