Works citing this work

4 works

Work: 2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

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3. New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers

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4. Influence of pumping uniformity on current tuning of the emission wavelength of InAsSb/InAsSbP diode lasers

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