Works citing this work

2 works

Work: Radiation Defects Formation in Si<Ge>

1. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   ArticleSemiconductor materials and interfacesInorganic Materials20051 citations

   ABIABI:AkademIndex/openalex/2005.article.000180

2. Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

   I. G. Atabaev, N. A. Matchanov, А. Yusupov +2

   ArticleSilicon Effects in AgricultureComputational Materials Science20080 citations

   ABIABI:AkademIndex/openalex/2008.article.000363