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Works cited by this work

10 works

Work: Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

  1. Statistics of the Recombinations of Holes and Electrons

    W. Shockley, W. T. Read

    Article195219 citations
    ABI

  2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

    Chih‐Tang Sah, Robert N. Noyce, W. Shockley

    Article195714 citations
    ABI

  3. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19793 citations
    ABI

  4. Recent developments in amorphous silicon p-n junction devices

    R.A.G. Gibson, W. E. Spear, P. G. Le Comber +1

    Article19802 citations
    ABI

  5. Phonon-assisted carrier transport across a grain boundary

    Chung-Sheng Wu, E.S. Yang

    Article19822 citations
    ABI

  6. RF Sputtered gold-amorphous silicon Schottky-barrier diodes

    Le Xu, D.K. Reinhard, Mark G. Thompson

    Article19822 citations
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  7. Doped amorphous semiconductors

    P. G. LeComber, W. E. Spear

    Chapter19792 citations
    ABI

  8. Determination of depletion width in amorphous materials using a simple analytical model

    M. S. Shur, W. Czubatyj, A. Madan

    Article19802 citations
    ABI

  9. Energy Conversion Process of p-i-n Amorphous Si Solar Cells

    Yukinori Kuwano, Shinya Tsuda, M. Ohnishi

    Article19822 citations
    ABI

  10. Untitled

    Other1 citations
    ABI