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  1. Films of a-Si:H doped with erbium from the metalorganic compound Er(HFA)3*DME, emitting at 1.54 μm

    V. B. Voronkov, V. G. Golubev, Н. И. Горшков +4

    ArticleThin-Film Transistor TechnologiesTechnical Physics Letters19980 citations
    ABI