Works citing this work

2 works

Work: Epitaxial GaAs Kinetic Studies: {001} Orientation

1. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

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   Articlenanoparticles nucleation surface interactionsRussian Physics Journal19800 citations

   ABIABI:AkademIndex/openalex/1980.article.000078

2. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

   Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

   ArticleGaN-based semiconductor devices and materialsRussian Physics Journal19880 citations

   ABIABI:AkademIndex/openalex/1988.article.000113