Works citing this work

2 works

Work: A reliable approach to charge-pumping measurements in MOS transistors

1. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

   A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

   ArticleSemiconductor materials and devicesTechnical Physics19970 citations

   ABIABI:AkademIndex/openalex/1997.article.000193

2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   ArticleSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 citations

   ABIABI:AkademIndex/openalex/2022.article.006400