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  1. Composition of silicon jointly doped with impurity atoms of gallium and phosphorus

    Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

    ArticleSilicon and Solar Cell TechnologiesПоверхность Рентгеновские синхротронные и нейтронные исследования20240 citations
    ABI