L. N. Aeksandrov

Работ: 1

Institute of Physics of Semiconductors, Siberian Department of Academy of Sciences of the USSR

1. The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular Beams

   L. N. Aeksandrov, A. S. Ltovich, E. D. Blorusets

   СтатьяAdvanced Materials Characterization Techniquesphysica status solidi (a)1979Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.605778