The Mechanism of Silicon Epitaxial Layer Growth from Ion-Molecular Beams

Energies of different stages of silicon homoepitaxial growth from ion-molecular beam (IMB) in vacuum: oxide layer destruction, physical absorption and chemisorption, surface diffusion etc, are estimated. Based on the discussion of the values obtained conclusions on the possible mechanism of the ion beam influence on nucleation and epitaxial layer growth are made. In the places of ion collision with crystallizing surface, point defects and local areas of atom excitation are formed which become centres of nucleation. Ions colliding with the centres of growth destroy the volume nuclei providing the conditions of two-dimensional covering. Ion beam makes the energetic additional feeding of diffusion and phase transition processes. [Russian Text Ignored].

Перевод пока недоступен