T. Nazarov

Работ: 1

Tashkentskij Gosudarstvennyj Univ., Tashkent (Uzbekistan)

1. The influence of structural defects of Si on height of potential barrier Mo - Si

   T. Nazarov

   СтатьяSemiconductor materials and interfaces1995Цитирований: 0

   ABIABI:AkademIndex/openalex/1995.article.000172